Datasheet

VS-P400 Series
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Vishay Semiconductors
Revision: 27-Mar-14
4
Document Number: 93755
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Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Voltage Drop Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Maximum Allowable Case
Temperature (°C)
Total Output Current (A)
10 20 30 405152535
45
0
70
80
90
100
110
120
130
Fully turned-on
180°
(Rect.)
180°
(Sine)
Per module
93755_04
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
0.5 1.0 2.0 3.01.5 2.5 3.5 4.0 4.5 5.0
1
100
10
1000
93755_05
T
J
= 125 °C
T
J
= 25 °C
Per junction
Peak Half Sine Wave
On-State Current (A)
Number of Equal Amplitude Half
Cycle Current Pulses (N)
10 1001
150
175
200
300
250
325
275
225
350
93755_06
Per junction
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
On-State Current (A)
Pulse Train Duration (s)
0.1 10.01
150
200
250
300
350
400
93755_07
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
Per junction
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Z
thJC
- Transient Thermal
Impedance (K/W)
93755_08
Steady state value
R
thJC
= 1.05 K/W
(DC operation)
Per junction