Datasheet

TFBS4711
www.vishay.com
Vishay Semiconductors
Rev. 3.1, 03-Jul-2018
4
Document Number: 82633
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Notes
• Typical values are for design aid only, not guaranteed nor subject to production testing
(1)
SD mode becomes active when SD is set high for more than 0.2 μs. In SD mode the detector is disabled and the output disconnected
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, V
CC1
= V
CC2
= 2.4 V to 5.5 V unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
TRANSCEIVER
Supply voltage V
CC1
2.4 - 5.5 V
Operating temperature range T
A
-25 - +85 °C
Data rates 9.6 - 115.2 kbit/s
Idle supply current at V
CC1
(receive mode, no signal)
SD = low,
T
amb
= -25 °C to +85 °C
independent of ambient light,
V
CC1
= V
CC2
= 2.4 V to 5.5 V
I
CC1
40 70 150 μA
SD = low, T
amb
= 25 °C,
V
CC1
= V
CC2
= 2.4 V to 5.5 V
I
CC1
40 70 100 μA
Average dynamic supply
current, transmitting
I
IRED
= 300 mA, 20 % duty cycle I
CC1
-0.62mA
Standby (SD)
(1)
supply current
SD = high,
T
amb
= -25 °C to +85 °C,
independent of ambient light
I
SD
-0.011 μA
RXD to V
CC1
impedance R
RXD
400 500 600 kΩ
Input voltage low (TXD, SD) V
ILo
-0.3 - 0.4 V
Input voltage high (SD) For compliance with I
SD
spec. V
IHi
V
CC1
- 0.3 - 6 V
Input voltage high (TXD) V
IHi
V
CC1
- 0.5 - 6 V
Timing logic decision level - 0.5 x V
CC1
-
Input leakage current low V
ILo
≤ 0.3 V I
ILo
-0.0110μA
Input leakage current high V
IHi
≥ V
CC1
- 0.3 V I
IHi
-0.0110μA
Input capacitance (TXD, SD) C
IN
--5pF
Output voltage low, RXD C
load
= 8 pF, I
OLo
≤ |+500 μA| V
OLo
--0.4V
Output voltage high, RXD I
OH
= -200 μA V
OHi
0.8 x V
CC1
-V
CC1
V
OPTOELECTRONIC CHARACTERISTICS (T
amb
= 25 °C, V
CC1
= V
CC2
= 2.4 V to 5.5 V unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
RECEIVER
Minimum irradiance E
e
in
angular range
(2)
9.6 kbit/s to 115.2 kbit/s
λ = 850 nm to 900 nm, α = 0°, 15°
E
e
-
35
(3.5)
80
(8)
mW/m
2
(μW/cm
2
)
Maximum irradiance E
e
in
angular range
(3)
λ = 850 nm to 900 nm E
e
-
5
(500)
-
kW/m
2
(mW/cm
2
)
Maximum no detection
irradiance
(1)
λ = 850 nm to 900 nm, t
r
, t
f
< 40 ns,
t
po
= 1.6 μs at f = 115 kHz,
no output signal allowed
E
e
4
(0.4)
--
mW/m
2
(μW/cm
2
)
Rise time of output signal 10 % to 90 %, C
L
= 8 pF t
r(RXD)
10 30 80 ns
Fall time of output signal 90 % to 10 %, C
L
= 8 pF t
f(RXD)
10 30 80 ns
RXD pulse width of output
signal
Input pulse length > 1.2 μs t
PW
1.7 2.2 3 μs
Stochastic jitter, leading edge
Input irradiance = 100 mW/m
2
,
≤ 115.2 kbit/s
- - 350 ns
Standby/shutdown delay,
receiver startup time
After shutdown active
or power-on
- - 500 μs
Latency t
L
- 50 150 μs