Datasheet

TEPT5700
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 24-Aug-11
2
Document Number: 81321
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Note
• Each 4000 piece bag will contain a single group. The label on the bag will indicate which binned group is in the bag. A specific group cannot
be ordered. Production shipments containing multiple bags will likely include multiple groups. Please design accordingly.
0
20
40
60
80
100
120
0 102030405060708090100
21333
R
thJA
= 230 K/W
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage I
C
= 0.1 mA V
CEO
6V
Collector dark current V
CE
= 5 V, E = 0 I
CEO
350nA
Collector emitter capacitance V
CE
= 0 V, f = 1 MHz, E = 0 C
CEO
16 pF
Collector light current
E
v
= 20 lx, CIE illuminant A,
V
CE
= 5 V
I
PCE
5.2 24 μA
E
v
= 100 lx, CIE illuminant A,
V
CE
= 5 V
I
PCE
75 μA
Angle of half sensitivity ϕ ± 50 deg
Wavelength of peak sensitivity λ
p
570 nm
Range of spectral bandwidth λ
0.5
440 to 800 nm
Collector emitter saturation voltage
E
v
= 20 lx, CIE illuminant A,
I
PCE
= 1.2 μA
V
CEsat
0.1 V
TYPE DEDICATED CHARACTERISTICS
PARAMETER TEST CONDITION BINNED GROUP SYMBOL MIN. MAX. UNIT
Photo current
E
V
= 20 lx,
CIE illuminant A,
V
CE
= 5 V, T
amb
= 25 °C
AI
PCE
5.2 9.9 μA
BI
PCE
8.2 15.4 μA
CI
PCE
12.7 24 μA