Datasheet

TEFD4300F
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 13-Jan-17
2
Document Number: 83472
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BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
-1-V
Breakdown voltage I
R
= 100 A, E = 0 V
(BR)
60 - - V
Reverse dark current V
R
= 10 V, E = 0 I
ro
-0.153 nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
-3.3- pF
V
R
= 5 V, f = 1 MHz, E = 0 C
D
-1.2- pF
Open circuit voltage E
e
= 1 mW/cm
2
, λ = 950 nm V
OC
- 350 - mV
Temperature coefficient of V
O
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Vo
--2.6-mV/K
Short circuit current E
e
= 1 mW/cm
2
, λ = 950 nm I
k
-15-A
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Ik
-0.1-%/K
Reverse light current E
e
= 1 mW/cm
2
, λ = 950 nm, V
R
= 5 V I
ra
91727A
Angle of half sensitivity ϕ -± 20 - deg
Wavelength of peak sensitivity λ
p
- 950 - nm
Range of spectral bandwidth λ
0.5
770 - 1070 nm
Rise time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
r
- 100 - ns
Fall time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
f
- 100 - ns
10
-12
10
-6
0 20 40 60 80 100
T
amb
- Ambient Temperature (°C)
I
r0
- Reverse Dark Current (A)
10
-7
10
-8
10
-9
10
-10
V
R
= 10 V
10
-11
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
V
R
= 5 V
λ = 950 nm
0
10080
60
4020