Datasheet

TEFD4300F
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 13-Jan-17
1
Document Number: 83472
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
TEFD4300F is a silicon PIN photodiode with high radiant
sensitivity in black, T-1 plastic package with daylight
blocking filter. Filter bandwitdth is matched with 850 nm to
950 nm IR emitters.
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• High radiant sensitivity
• Daylight blocking filter matched with 850 nm to
950 nm emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 20°
• Package matched with IR emitter series
VSLB3940, TSUS4300, and TSAL4400
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector for data transmission
• Optical switches
• Counters and sorters
• Interrupters
•Encoders
• Position sensors
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT I
ra
(μA) ϕ (deg) λ
0.5
(nm)
TEFD4300F 17 ± 20 770 to 1070
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TEFD4300F Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
TEFD4300F-QS21 Tape and reel MOQ: 10 000 pcs, 2000 pcs/reel T-1
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
60 V
Power dissipation T
amb
≤ 25 °C P
V
215 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +100 °C
Storage temperature range T
stg
-40 to +100 °C
Soldering temperature t ≤ 3 s, 2 mm from case T
sd
260 °C
Thermal resistance junction / ambient Connected with Cu wire, 0.14 mm
2
R
thJA
450 K/W