Datasheet

www.vishay.com
2
Document Number 83228
Rev. 1.3, 31-Aug-04
VISHAY
TDSR07../ 10../ 13..
Vishay Semiconductors
Optical and Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Red
Power dissipation T
amb
≤ 85°C P
V
185 mW
Junction temperature T
j
105 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 85 °C
Soldering temperature t ≤ 3 sec,
2mm below seating plane
T
sd
260 °C
Thermal resistance LED
junction/ambient
R
thJA
100 K/W
Parameter Test condition Symbol Min Ty p. Max Unit
TDSR0750, TDSR0760
Luminous intensity per segment
(digit average)
I
F
= 1 mA I
V
180 2200 µcd
Dominant wavelength I
F
= 1 mA λ
d
640 nm
Peak wavelength I
F
= 1 mA λ
p
650 nm
Forward voltage per segment
or DP
I
F
= 1 mA V
F
1.8 2.4 V
Reverse voltage per segment
or DP
V
R
= 6 V I
R
10 µA
TDSR1050, TDSR1060
Luminous intensity per segment
(digit average)
I
F
= 1 mA I
V
280 3600 µcd
Dominant wavelength I
F
= 1 mA λ
d
640 nm
Peak wavelength I
F
= 1 mA λ
p
650 nm
Forward voltage per segment
or DP
I
F
= 1 mA V
F
1.8 2.4 V
Reverse voltage per segment
or DP
V
R
= 6 V I
R
10 µA
TDSR1350, TDSR1360
Luminous intensity per segment
(digit average)
I
F
= 1 mA I
V
280 3600 µcd
Dominant wavelength I
F
= 1 mA λ
d
640 nm
Peak wavelength I
F
= 1 mA λ
p
650 nm
Forward voltage per segment
or DP
I
F
= 1 mA V
F
1.8 2.4 V
Reverse voltage per segment
or DP
V
R
= 6 V I
R
10 µA
Parameter Test condition Symbol Value Unit