Datasheet

www.vishay.com
2
Document Number 83121
Rev. 1.4, 31-Aug-04
VISHAY
TDSL11..
Vishay Semiconductors
Optical and Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Red
TDSL1150 / TDSL1160
1)
I
Vmin
and I
V
groups are mean values of segments a to g
Typical Characteristics (T
amb
= 25 °C unless otherwise specified)
Operating temperature range T
amb
-40 to + 85 °C
Storage temperature range T
stg
-40 to + 85 °C
Soldering temperature t ≤ 3 sec, 2 mm below seating
plane
T
sd
260 °C
Thermal resistance LED
junction/ambient
R
thJA
180 K/W
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage per segment I
F
= 2 mA V
F
1.8 2.4 V
I
F
= 20 mA V
F
2.7 3 V
Reverse voltage per segment I
R
= 10 µAV
R
620 V
Junction capacitance V
R
= 0, f = 1 MHz C
j
30 pF
Luminous intensity per segment
(digit average)
1)
I
F
= 2 mA I
V
180 260 µcd
I
F
= 5 mA I
V
1000 µcd
I
F
= 20 mA, t
p
/T = 0.25 I
V
1300 µcd
Dominant wavelength I
F
= 2 mA λ
d
612 625 nm
Peak wavelength I
F
= 2 mA λ
p
635 nm
Angle of half intensity I
F
= 2 mA ϕ ± 50 deg
Parameter Test condition Symbol Value Unit
Figure 1. Power Dissipation vs. Ambient Temperature
020406080
0
100
200
300
400
500
P – Power Dissipation ( mW )
V
T
amb
– Ambient Temperature ( °C )
100
95 11483
Figure 2. Forward Current vs. Ambient Temperature for AlInGaP
0
5
10
15
20
30
020406080
I – Forward Current ( mA)
F
T
amb
– Ambient Temperature (°C )
100
95 11484
25