Datasheet

TDSL51.0
Vishay Semiconductors
2 (6)
Rev. A2, 05-Oct-00
www.vishay.com Document Number 83123
Absolute Maximum Ratings
T
amb
= 25°C, unless otherwise specified
TDSL5150 /TDSL5160
Parameter Test Conditions Symbol Value Unit
Reverse voltage per segment V
R
6 V
DC forward current per segment I
F
15 mA
Peak forward current per segment I
FM
45 mA
Surge forward current per segment t
p
≤ 10 m s (non repetitive) I
FSM
100 mA
Power dissipation T
amb
≤ 45 ° C P
V
320 mW
Junction temperature T
j
100 ° C
Operating temperature range T
amb
–40 to + 85 ° C
Storage temperature range T
stg
–40 to + 85 ° C
Soldering temperature t ≤ 3 sec, 2mm below
seating plane
T
sd
260 ° C
Thermal resistance LED junction/ambient R
thJA
180 K/W
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
High efficiency red (TDSL5150 , TDSL5160 )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity per segment
1)
I
F
= 2 mA I
V
280 400 m cd
yg
(digit average)
1)
I
F
= 5 mA I
V
1600 m cd
I
F
= 20 mA, t
p
/T =0.25 I
V
2000 m cd
Dominant wavelength I
F
= 2 mA l
d
612 625 nm
Peak wavelength I
F
= 2 mA l
p
635 nm
Angle of half intensity I
F
= 2 mA ϕ ±50 deg
Forward voltage per segment I
F
= 2 mA V
F
1.8 2.4 V
gg
I
F
= 20 mA V
F
2.7 3 V
Reverse voltage per segment I
R
= 10 m A V
R
6 20 V
Junction capacitance V
R
= 0, f = 1 MHz C
j
30 pF
1)
I
Vmin
and I
V
groups are mean values of segments a to g