Datasheet

TDSG / O / Y11..
Document Number 83124
Rev. 1.5, 20-Feb-06
Vishay Semiconductors
www.vishay.com
3
Yellow
TDSY1150
1)
I
Vmin
and I
V
groups are mean
Green
TDSG1150/1160
1)
I
Vmin
and I
V
groups are mean
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Luminous intensity per segment
(digit average)
1)
I
F
= 10 mA I
V
450 µcd
Dominant wavelength I
F
= 10 mA λ
d
581 594 nm
Peak wavelength I
F
= 10 mA λ
p
585 nm
Angle of half intensity I
F
= 10 mA ϕ ± 50 deg
Forward voltage per segment
or DP
I
F
= 20 mA V
F
2.4 3 V
Reverse voltage per segment
or DP
I
R
= 10 µA V
R
615 V
Parameter Test condition Symbol Min Typ. Max Unit
Luminous intensity per segment
(digit average)
1)
I
F
= 10 mA I
V
450 µcd
Dominant wavelength I
F
= 10 mA λ
d
562 575 nm
Peak wavelength I
F
= 10 mA λ
p
565 nm
Angle of half intensity I
F
= 10 mA ϕ ± 50 deg
Forward voltage per segment
or DP
I
F
= 20 mA V
F
2.4 3 V
Reverse voltage per segment
or DP
I
R
= 10 µA V
R
615 V
Figure 1. Power Dissipation vs. Ambient Temperature
0
100
200
300
400
500
P-Power Dissipation (mW)
V
T
amb
-Ambient Temperature (°C)
95 11477
20 40 60 800 100
Figure 2. Forward Current vs. Ambient Temperature
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
0
5
10
15
20
25
20 40 60 800100
20044