Datasheet

ManualsBrandsVishay ManualsOptical DetectorsFork coupler

TCST110. up to TCST230.

TELEFUNKEN Semiconductors

Rev. A4, 16-Apr-98

1 (8)

Transmissive Optical Sensor with Phototransistor Output

Description

This device has a compact construction where the

emitting-light sources and the detectors are located face-

to-face on the same optical axis.

The operating wavelength is 950

nm. The detector

consists of a phototransistor.

14805

14806

Applications

Contactless optoelectronic switch, control and counter

Features

Compact construction

No setting efforts

Polycarbonate case protected against ambient light

2 case variations

3 different apertures

CTR selected in groups (regarding fourth number of

type designation)

Pin Connection

95 10796

7.6

0.3”

Order Instruction

Part Number Resolution (mm) Aperture (mm)

TCST1103

TCST2103

TCST1202

TCST2202

TCST1300

025

TCST2300

Summary of content (8 pages)

PAGE 1
TCST110. up to TCST230. Transmissive Optical Sensor with Phototransistor Output Description The operating wavelength is 950 nm. The detector consists of a phototransistor. This device has a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis.
PAGE 2
TCST110. up to TCST230.
PAGE 3
TCST110. up to TCST230. Electrical Characteristics Tamb = 25°C Input (Emitter) Parameters Forward voltage Junction capacitance Test Conditions IF = 60 mA VR = 0, f = 1 MHz Type Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Test Conditions IC = 1 mA Type Symbol VCEO Min. 70 Typ. Max. Unit V IE = 10 mA VECO 7 VCE = 25 V, IF = 0, E = 0 ICEO Output (Detector) Parameters Collector emitter voltage Emitter collector voltage Collector dark current V 100 nA Max.
PAGE 4
TCST110. up to TCST230. Switching Characteristics VS = 5 V, IC = 2 mA, RL = 100 W Parameters Turn-on time Turn-off time Test Conditions IF 0 Symbol ton toff T Typ. 10 8 Max. Unit ms ms +5V IF IC = 2 mA ; R G = 50 W tp Min. Adjusted through input amplitude = 0.01 tp = 50 ms Channel I Oscilloscope Channel II 50 W 100 W RL CL w 1 MW v 20 pF 95 10897 Figure 1. Test circuit 4 (8) TELEFUNKEN Semiconductors Rev.
PAGE 5
TCST110. up to TCST230. Typical Characteristics (Tamb = 25°C, unless otherwise specified) 10000 ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) 400 300 Coupled Device 200 Phototransistor IR–Diode 100 VCE=25V IF=0 1000 100 10 0 1 0 30 60 90 120 150 Tamb – Ambient Temperature ( °C ) 95 11088 0 95 11090 Figure 2. Total Power Dissipation vs. Ambient Temperature 1000.0 25 50 100 75 Tamb – Ambient Temperature ( °C ) Figure 5.
PAGE 6
TCST110. up to TCST230. Typical Characteristics (Tamb = 25°C, unless otherwise specified) 110 10.0 1.0 0.1 0.1 1.0 10.0 70 s 60 50 40 30 20 10 0 –0.5 –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5 s – Displacement ( mm ) Figure 10. Rel. Collector Current vs. Displacement 20 110 100 I Crel – Relative Collector Current Non Saturated Operation VS=5V RL=100W 15 10 ton 5 toff 0 2 4 6 8 Figure 9. Turn on / off Time vs. Collector Current A=0.5mm 80 s 70 60 50 40 30 20 10 0 –0.5 –0.4 –0.3 –0.
PAGE 7
TCST110. up to TCST230. Dimensions of TCST1.0. in mm A* weight: ca. 0.80 g A*: various apertures TCST110. with aperture 1.00 mm (0.04”) TCST120. with aperture 0.50 mm (0.02”) TCST130. with aperture 0.25 mm (0.01”) 96 12094 Dimensions of TCST2.0. in mm A* weight: ca. 0.90 g A*: various apertures TCST210. with aperture 1.00 mm (0.04”) TCST220. with aperture 0.50 mm (0.02”) TCST230. with aperture 0.25 mm (0.01”) 96 12095 TELEFUNKEN Semiconductors Rev.
PAGE 8
TCST110. up to TCST230. Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.