Datasheet

TCST110. up to TCST230.
TELEFUNKEN Semiconductors
Rev. A4, 16-Apr-98
5 (8)
Typical Characteristics (T
amb
= 25°C, unless otherwise specified)
0 30 60 90 120
0
100
200
300
400
150
95 11088
P – Total Power Dissipation ( mW )
tot
T
amb
– Ambient Temperature ( °C )
Coupled Device
Phototransistor
IR–Diode
Figure 2. Total Power Dissipation vs. Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
– Forward Voltage ( V )96 11862
F
I – Forward Current ( mA )
Figure 3. Forward Current vs. Forward Voltage
–25 0 25 50
0
0.5
1.0
1.5
2.0
CTR – Relative Current Transfer Ratio
rel
T
amb
– Ambient Temperature ( °C )
100
95 11089
75
V
CE
=5V
I
F
=20mA
Figure 4. Rel. Current Transfer Ratio vs. Ambient Temperature
0255075
1
10
100
1000
10000
I – Collector Dark Current,
CEO
T
amb
– Ambient Temperature ( °C )
100
95 11090
with open Base ( nA )
V
CE
=25V
I
F
=0
Figure 5. Collector Dark Current vs. Ambient Temperature
0.001
0.010
0.100
1.000
10.000
0.1 1.0 10.0 100.0
I
F
– Forward Current ( mA )96 12066
V
CE
=5V
I – Collector Current ( mA )
C
Figure 6. Collector Current vs. Forward Current
0.01
0.10
1.00
10.00
0.1 1.0 10.0 100.0
V
CE
– Collector Emitter Voltage ( V )96 12067
I – Collector Current ( mA )
C
20mA
10mA
5mA
2mA
1mA
I
F
=50mA
Figure 7. Collector Current vs. Collector Emitter Voltage