Datasheet

TCST110. up to TCST230.
TELEFUNKEN Semiconductors
Rev. A4, 16-Apr-98
3 (8)
Electrical Characteristics
T
amb
= 25°C
Input (Emitter)
Parameters Test Conditions Type Symbol Min. Typ. Max. Unit
Forward voltage I
F
= 60 mA V
F
1.25 1.6 V
Junction
capacitance
V
R
= 0,
f = 1 MHz
C
j
50 pF
Output (Detector)
Parameters Test Conditions Type Symbol Min. Typ. Max. Unit
Collector emitter
voltage
I
C
= 1 mA V
CEO
70 V
Emitter collector
voltage
I
E
= 10 m A V
ECO
7 V
Collector dark
current
V
CE
= 25 V,
I
F
= 0, E = 0
I
CEO
100 nA
Coupler
Parameters Test Conditions Type Symbol Min. Typ. Max. Unit
Current transfer
ratio
V
CE
= 5 V,
I
F
= 20 mA
TCST1103,
TCST2103
TCST1202,
TCST2202
TCST1300,
TCST2300
CTR
CTR
CTR
10
5
1.25
20
10
2.5
%
%
%
Collector current V
CE
= 5 V,
I
F
= 20 mA
TCST1103,
TCST2103
TCST1202,
TCST2202
TCST1300,
TCST2300
I
C
I
C
I
C
2
1
0.25
4
2
0.5
mA
mA
mA
Collector emitter
saturation voltage
I
F
= 20 mA,
I
C
= 1 mA
TCST1103,
TCST2103
V
CEsat
0.4 V
Collector emitter
saturation voltage
I
F
= 20 mA,
I
C
= 0.5 mA
TCST1202,
TCST2202
V
CEsat
0.4 V
Collector emitter
saturation voltage
I
F
= 20 mA,
I
C
= 0.1 mA
TCST1300,
TCST2300
V
CEsat
0.4 V
Resolution, path of
the shutter crossing
the radiant sensitive
zone
I
Crel
= 10/90% TCST1103,
TCST2103
TCST1202,
TCST2202
TCST1300,
TCST2300
s
s
s
0.6
0.4
0.2
mm
mm
mm