Datasheet

TCST110. up to TCST230.
TELEFUNKEN Semiconductors
Rev. A4, 16-Apr-98
2 (8)
Absolute Maximum Ratings
Input (Emitter)
Parameters Test Conditions Symbol Value Unit
Reverse voltage V
R
6 V
Forward current I
F
60 mA
Forward surge current t
p
≤ 10 m s I
FSM
3 A
Power dissipation T
amb
≤ 25°C P
V
100 mW
Junction temperature T
j
100 °C
Output (Detector)
Parameters Test Conditions Symbol Value Unit
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7 V
Collector current I
C
100 mA
Collector peak current t
p
/T = 0.5, t
p
≤ 10 ms I
CM
200 mA
Power dissipation T
amb
≤ 25°C P
v
150 mW
Junction temperature T
j
100 °C
Coupler
Parameters Test Conditions Symbol Value Unit
Total power dissipation T
amb
≤ 25°C P
tot
250 mW
Operating temperature range T
amb
–55 to +85 °C
Storage temperature range T
stg
–55 to +100 °C
Soldering temperature 2 mm from case, t ≤ 5 s T
sd
260 °W