Datasheet

TCLT110. Series
www.vishay.com
Vishay Semiconductors
Rev. 2.5, 16-May-13
4
Document Number: 83514
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Fig. 3 - Test Circuit, Non-Saturated Operation
Fig. 4 - Test Circuit, Saturated Operation
Fig. 5 - Switching Times
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Delay time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 ,
(see figure 3)
t
d
3.0 μs
Rise time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 ,
(see figure 3)
t
r
3.0 μs
Turn-on time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 ,
(see figure 3)
t
on
6.0 μs
Storage time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 ,
(see figure 3)
t
s
0.3 μs
Fall time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 ,
(see figure 3)
t
f
4.7 μs
Turn-off time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 ,
(see figure 3)
t
off
5.0 μs
Turn-on time
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k,
(see figure 4)
t
on
9.0 μs
Turn-off time
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k,
(see figure 4)
t
off
10.0 μs
Channel I
Channel II
95 10804
R
G
= 50 Ω
t
p
t
p
= 50 µs
T
= 0.01
+ 5 V
I
F
0
50 Ω 100 Ω
I
F
I
C
= 2 mA; adjusted through
input amplitude
Oscilloscope
R
L
= 1 MΩ
C
L
= 20 pF
Channel I
Channel II
95 10843
R
G
= 50 Ω
t
p
t
p
= 50 µs
T
= 0.01
+ 5 V
I
C
I
F
0
50 Ω
1 kΩ
I
F
= 10 mA
Oscilloscope
R
L
≥
C
L
20 pF
1 MΩ
≤
t
p
t
t
0
0
10 %
90 %
100 %
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
t
p
Pulse duration
t
d
Delay time
t
r
Rise time
t
on
(= t
d
+ t
r
) Turn-on time
t
s
Storage time
t
f
Fall time
t
off
(= t
s
+ t
f
) Turn-off time
96 11698