Datasheet
TCLT110. Series
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Vishay Semiconductors
Rev. 2.5, 16-May-13
3
Document Number: 83514
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Note
• According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety
ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
V
CE
= 5 V, I
F
= 5 mA TCLT1100 CTR 50 600 %
V
CE
= 5 V, I
F
= 10 mA
TCLT1102 CTR 63 125 %
TCLT1103 CTR 100 200 %
TCLT1104 CTR 160 320 %
V
CE
= 5 V, I
F
= 1 mA
TCLT1102 CTR 22 45 %
TCLT1103 CTR 34 70 %
TCLT1104 CTR 56 100 %
V
CE
= 5 V, I
F
= 5 mA
TCLT1105 CTR 50 150 %
TCLT1106 CTR 100 300 %
TCLT1107 CTR 80 160 %
TCLT1108 CTR 130 260 %
TCLT1109 CTR 200 400 %
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test
100 %, t
test
= 1 s V
pd
2.0 kV
Partial discharge test voltage -
lot test (sample test)
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IOTM
8kV
V
pd
1.68 kV
Insulation resistance
V
IO
= 500 V R
IO
10
12
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
R
IO
10
9
Forward current I
si
130 mA
Power dissipation P
so
265 mW
Rated impulse voltage V
IOTM
8kV
Safety temperature T
si
150 °C
Clearance distance 8.0 mm
Creepage distance 8.0 mm
Insulation distance (internal) 0.40 mm
0 25 50 75 125
0
50
100
150
200
300
T
si
- Safety Temperature (°C)
150
94 9182-2
100
250
IR-diode
I
si
(mA)
Phototransistor
P
so
(mW)
t
13930
t
1
, t
2
= 1 s to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2