Datasheet

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Document Number: 83503
814 Rev. 2.3, 14-Oct-09
TCET1100, TCET1100G
Vishay Semiconductors
Optocoupler, Phototransistor Output,
High Temperature
Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC 60747
Fig. 3 - Test Circuit, Non-Saturated Operation Fig. 4 - Test Circuit, Saturated Operation
0 25 50 75 125
0
50
100
150
200
300
P
tot
- Total Power Dissipation (mW)
T
si
- Safety Temperature (°C)
150
94 9182
100
250
Phototransistor
P
si
(mW)
IR-diode
I
si
(mA)
t
13930
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
Pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Delay time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω,
(see figure 3)
t
d
3µs
Rise time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω,
(see figure 3)
t
r
3µs
Turn-on time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω,
(see figure 3)
t
on
6µs
Storage time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω,
(see figure 3)
t
s
0.3 µs
Fall time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω,
(see figure 3)
t
f
4.7 µs
Turn-off time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω,
(see figure 3)
t
off
5µs
Turn-on time
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 kΩ,
(see figure 4)
t
on
9µs
Turn-off time
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 kΩ,
(see figure 4)
t
off
10 µs
Channel I
Channel II
95 10804
R
G
= 50 Ω
t
p
t
p
= 50 µs
T
= 0.01
+ 5 V
I
F
0
50 Ω 100 Ω
I
F
I
C
= 2 mA; adjusted through
input amplitude
Oscilloscope
R
L
= 1 MΩ
C
L
= 20 pF
Channel I
Channel II
95 10843
R
G
= 50 Ω
t
p
t
p
= 50 µs
T
= 0.01
+ 5 V
I
C
I
F
0
50 Ω
1 kΩ
I
F
= 10 mA
Oscilloscope
R
L
≥
C
L
20 pF
1 MΩ
≤