Datasheet

Document Number: 83503 For technical questions, contact: [e-mail]
www.vishay.com
Rev. 2.3, 14-Oct-09 813
TCET1100, TCET1100G
Optocoupler, Phototransistor Output,
High Temperature
Vishay Semiconductors
Note
According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
V
CE
= 5 V, I
F
= 1 mA
TCET1101
TCET1101G
CTR 13 30 %
TCET1102
TCET1102G
CTR 22 45 %
TCET1103
TCET1103G
CTR 34 70 %
TCET1104
TCET1104G
CTR 56 90 %
V
CE
= 5 V, I
F
= 5 mA
TCET1100
TCET1100G
CTR 50 600 %
TCET1105
TCET1105G
CTR 50 150 %
TCET1106
TCET1106G
CTR 100 300 %
TCET1107
TCET1107G
CTR 80 160 %
TCET1108
TCET1108G
CTR 130 260 %
TCET1109
TCET1109G
CTR 200 400 %
V
CE
= 5 V, I
F
= 10 mA
TCET1101
TCET1101G
CTR 40 80 %
TCET1102
TCET1102G
CTR 63 125 %
TCET1103
TCET1103G
CTR 100 200 %
TCET1104
TCET1104G
CTR 160 320 %
MAXIMUM SAFETY RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward current I
F
130 mA
OUTPUT
Power dissipation P
diss
265 mW
COUPLER
Rated impulse voltage V
IOTM
6kV
Safety temperature T
si
150 °C
INSULATION RATED PARAMETERS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test
100 %, t
test
= 1 s V
pd
1.6 kV
Partial discharge test voltage -
lot test (sample test)
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IOTM
6kV
V
pd
1.3 kV
Insulation resistance
V
IO
= 500 V R
IO
10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Ω
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
R
IO
10
9
Ω