Datasheet

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Document Number: 83503
812 Rev. 2.3, 14-Oct-09
TCET1100, TCET1100G
Vishay Semiconductors
Optocoupler, Phototransistor Output,
High Temperature
Note
(1)
The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s “Thermal
Characteristics of Optocouplers” application note.
(2)
For 2 layer FR4 board (4" x 3" x 0.062").
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
THERMAL CHARACTERISTICS
(1)
PARAMETER SYMBOL VALUE UNIT
LED power dissipation P
diss
100 mW
Output power dissipation P
diss
150 mW
Maximum LED junction temperature T
jmax.
125 °C
Maximum output die junction temperature T
jmax.
125 °C
Thermal resistance, junction emitter to board θ
EB
173 °C/W
Thermal resistance, junction emitter to case θ
EC
149 °C/W
Thermal resistance, junction detector to board θ
DB
111 °C/W
Thermal resistance, junction detector to case θ
DC
127 °C/W
Thermal resistance, junction emitter to
junction detector
θ
ED
173 °C/W
Thermal resistance, board to ambient
(2)
θ
BA
197 °C/W
Thermal resistance, case to ambient
(2)
θ
CA
4041 °C/W
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 50 mA V
F
1.25 1.6 V
Junction capacitance V
R
= 0, f = 1 MHz C
j
50 pF
OUTPUT
Collector emitter voltage I
C
= 1 mA V
CEO
70 V
Emitter collector voltage I
E
= 100 µA V
ECO
7V
Collector emitter cut-off current V
CE
= 20 V, I
F
= 0 A, E = 0 I
CEO
10 100 nA
COUPLER
Collector emitter saturation voltage I
F
= 10 mA, I
C
= 1 mA V
CEsat
0.3 V
Cut-off frequency V
CE
= 5 V, I
F
= 10 mA, R
L
= 100 Ω f
c
110 kHz
Coupling capacitance f = 1 MHz C
k
0.3 pF
T
A
θ
CA
T
C
T
JD
T
JE
T
B
θ
EC
θ
EB
θ
DC
θ
DB
θ
BA
θ
DE
T
A
19996
Package