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Document Number: 83503

810 Rev. 2.3, 14-Oct-09

TCET1100, TCET1100G

Vishay Semiconductors

Optocoupler, Phototransistor Output, High Temperature

DESCRIPTION

The TCET110. consists of a phototransistor optically coupled

to a gallium arsenide infrared-emitting diode in a 4-lead

plastic dual inline package.

AGENCY APPROVALS

• UL1577, file no. E52744, double protection

• cUL tested, file A52744

• BSI: EN 60065:2002, EN 60950:2000

• DIN EN 60747-5-5 (VDE 0884)

•FIMKO

FEATURES

• High common mode rejection

• Low temperature coefficient of CTR

• CTR offered in 9 groups

• Reinforced isolation provides circuit protection

against electrical shock (safety class II)

• Isolation materials according to UL 94 V-O

• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)

• Climatic classification 55/100/21 (IEC 60068 part 1)

• Rated impulse voltage (transient overvoltage)

IOTM

= 6 kV

peak

• Isolation test voltage (partial discharge test voltage)

= 1.6 kV

• Rated isolation voltage (RMS includes DC)

IOWM

= 600 V

RMS

• Rated recurring peak voltage (repetitive)

IORM

= 848 V

peak

• Creepage current resistance according to VDE 0303/

IEC 60112 comparative tracking index: CTI ≥ 175

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

APPLICATIONS

Circuits for safe protective separation against electrical

shock according to safety class II (reinforced isolation):

• for appl. class I - IV at mains voltage ≤ 300 V

• for appl. class I - III at mains voltage ≤ 600 V according to

DIN EN 60747-5-5 (VDE 0884), suitable for:

- Switch-mode power supplies

- Line receiver

- Computer peripheral interface

- Microprocessor system interface

17197_5

17197_4

Summary of content (9 pages)

PAGE 1
TCET1100, TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature FEATURES C E • High common mode rejection 4 3 • Low temperature coefficient of CTR • CTR offered in 9 groups • Reinforced isolation provides circuit protection against electrical shock (safety class II) 1 2 A C C • Isolation materials according to UL 94 V-O V D E 17197_5 17197_4 • Pollution degree 2 (DIN/VDE 0110/resp.
PAGE 2
TCET1100, TCET1100G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature ORDER INFORMATION PART REMARKS TCET1100 CTR 50 % to 600 %, DIP-4 TCET1101 CTR 40 % to 80 %, DIP-4 TCET1102 CTR 63 % to 125 %, DIP-4 TCET1103 CTR 100 % to 200 %, DIP-4 TCET1104 CTR 160 % to 320 %, DIP-4 TCET1105 CTR 50 % to 150 %, DIP-4 TCET1106 CTR 100 % to 300 %, DIP-4 TCET1107 CTR 80 % to 160 %, DIP-4 TCET1108 CTR 130 % to 260 %, DIP-4 TCET1109 CTR 200 % to 400 %, DIP-4 TCET1100G CTR 50 %
PAGE 3
TCET1100, TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature THERMAL CHARACTERISTICS PARAMETER (1) SYMBOL VALUE UNIT LED power dissipation Pdiss 100 mW Output power dissipation Pdiss 150 mW Maximum LED junction temperature Tjmax. 125 °C Maximum output die junction temperature Tjmax.
PAGE 4
TCET1100, TCET1100G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature CURRENT TRANSFER RATIO PARAMETER TEST CONDITION VCE = 5 V, IF = 1 mA IC/IF VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA PART SYMBOL MIN. TYP. TCET1101 TCET1101G MAX.
PAGE 5
TCET1100, TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, Ptot - Total Power Dissipation (mW) High Temperature VIOTM 300 t1, t2 t3 , t4 ttest tstres Phototransistor Psi (mW) 250 200 = 1 to 10 s =1s = 10 s = 12 s VPd VIOWM VIORM 150 100 IR-diode Isi (mA) 50 0 0 0 25 50 75 100 125 150 t3 ttest t4 t1 13930 tTr = 60 s t2 t stres Tsi - Safety Temperature (°C) 94 9182 t Fig. 1 - Derating Diagram Fig.
PAGE 6
TCET1100, TCET1100G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature IF 0 tp IC t 100 % 90 % 10 % 0 tr td tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time t tf t off ts t on Storage time Fall time Turn-off time ts tf t off (= ts + tf) 96 11698 Fig.
PAGE 7
TCET1100, TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature CTR - Current Transfer Ratio (%) 100 IC - Collector Current (mA) VCE = 5 V 10 1 0.1 0.01 0.1 1 20 mA IF = 50 mA 10 mA 10 5 mA 2 mA 1 1 mA 0.1 95 10985 VCE - Collector Emitter Voltage (V) VCEsat - Collector Emitter Saturation Voltage (V) 20 % used 0.8 CTR = 50 % used 0.6 0.4 0.2 10 % used 0 IC - Collector Current (mA) Fig. 12 - Collector Emitter Saturation Voltage vs. Collector Current www.
PAGE 8
TCET1100, TCET1100G Optocoupler, Phototransistor Output, Vishay Semiconductors High Temperature PACKAGE DIMENSIONS in millimeters 6.5 ± 0.3 Pin 1 identifier 7.62 to 9.5 4.58 ± 0.3 7.62 typ. 0.4 ± 0.1 3.5 ± 0.1 4.5 ± 0.3 2.8 ± 0.5 0° to 15° 1.3 ± 0.1 0.25 typ. 0.5 ± 0.1 i178027-4 2.54 typ. TCET1100G type 7.62 typ. 4.5 ± 0.3 2.55 ± 0.25 20802-3 10.16 typ. PACKAGE MARKING ET1100 V YWW 24 21764-3 Document Number: 83503 Rev. 2.
PAGE 9
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