Datasheet

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Document Number: 71141
S10-0107-Rev. E, 18-Jan-10
Vishay Siliconix
SUP85N10-10, SUB85N10-10
TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
On-Resistance vs. Junction Temperature
Avalanche Current vs. Time
0.0
0.5
1.0
1.5
2.0
2.5
- 50 - 25 0 25 50 75 100 125 150 175
V
GS
= 10 V
I
D
= 30 A
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
t
in
(s)
1000
10
0.00001 0.001 0.1 1
0.1
)
a
(
I
vaD
0.01
I
AV
(A) at T
A
= 150 °C
100
1
0.0001
I
AV
(A) at T
A
= 25 °C
Source-Drain Diode Forward Voltage
T
J
- Drain-Source Breakdown
vs. Junction-Temperature
100
10
1
0.3 0.6 0.9 1.2
T
J
= 25 °C
T
J
= 150 °C
0
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
90
100
110
120
130
140
- 50 - 25 0 25 50 75 100 125 150 175
T
J
-Junction Temperature (°C)
)V(V
SD
I
D
= 250 µA