Datasheet

Document Number: 71141
S10-0107-Rev. E, 18-Jan-10
www.vishay.com
3
Vishay Siliconix
SUP85N10-10, SUB85N10-10
TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Output Characteristics
Transconductance
Capacitance
0
50
100
150
200
2
5
0
02468 10
3 V
V
GS
= 10 V thru 6 V
4 V
5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0
50
100
150
200
250
020406080 100
-)S( ecnat
cudno
csnarT g
sf
T
C
= - 55 °C
25 °C
125 °C
I
D
- Drain Current (A)
0
2000
4000
6000
8000
10 000
0 1530456075
C
iss
C
oss
C
rss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
50
100
150
200
0123456
25 °C
- 55 °C
T
C
= 125 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0.000
0.005
0.010
0.015
0.020
0 20406080 100 120
V
GS
= 10 V
V
GS
= 4.5 V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
4
8
12
16
20
0 50 100 150 200
V
DS
= 50 V
I
D
= 85 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS