Datasheet

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Document Number: 71141
S10-0107-Rev. E, 18-Jan-10
Vishay Siliconix
SUP85N10-10, SUB85N10-10
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
100
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
13
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 100 V, V
GS
= 0 V
1
µA
V
DS
= 100 V, V
GS
= 0 V, T
J
= 125 °C
50
V
DS
= 100 V, V
GS
= 0 V, T
J
= 175 °C
250
On-State Drain Current
a
I
D(on)
V
DS
= ≥ 5 V, V
GS
= 10 V 120 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 30 A
0.0085 0.0105
Ω
V
GS
= 4.5 V, I
D
= 20 A
0.010 0.012
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 °C
0.017
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 °C
0.022
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
25 S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
6550
pFOutput Capacitance
C
oss
665
Reverse Transfer Capacitance
C
rss
265
Total Gate Charge
c
Q
g
V
DS
= 50 V, V
GS
= 10 V, I
D
= 85 A
105 160
nC
Gate-Source Charge
c
Q
gs
17
Gate-Drain Charge
c
Q
gd
23
Tur n - O n D e l ay Time
c
t
d(on)
V
DD
= 50 V, R
L
= 0.6 Ω
I
D
≅ 85 A, V
GEN
= 10 V, R
g
= 2.5 Ω
12 25
ns
Rise Time
c
t
r
90 135
Turn-Off DelayTime
c
t
d(off)
55 85
Fall Time
c
t
f
130 195
Source-Drain Diode Ratings and Characteristics T
C
= 25 °C
b
Continuous Current
I
S
85
A
Pulsed Current
I
SM
240
Forward Voltage
a
V
SD
I
F
= 85 A, V
GS
= 0 V
1.0 1.5 V
Reverse Recovery Time
t
rr
I
F
= 50 A, dI/dt = 100 A/µs
85 140 ns
Peak Reverse Recovery Current
I
RM(REC)
4.5 7 A
Reverse Recovery Charge
Q
rr
0.17 0.35
µC