Datasheet

www.vishay.com
4
Document Number: 71109
S10-2429-Rev. E, 25-Oct-10
Vishay Siliconix
SUB75P03-07, SUP75P03-07
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
Avalanche Current vs. Time
0
0.3
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150 175
(Normalized)
- On-Resistance
T
J
- Junction Temperature (°C)
R
DS(on)
V
GS
= 10 V
I
D
= 30 A
t
in
(s)
1000
10
0.00001 0.001 0.1 1
100
(a)I
Dav
0.010.0001
I
AV
(A) at T
A
= 25 °C
I
AV
(A) at T
A
= 150 °C
1
0.1
Source-Drain Diode Forward Voltage
Drain Source Breakdown
vs. Junction Temperature
0 0.2 0.4 0.6 0.8 1.0
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
100
10
1
T
J
= 25 °C
T
J
= 150 °C
25
30
35
40
45
- 50 - 25 0 25 50 75 100 125 150 175
T
J
- Junction Temperature (°C)
(V)V
DS
I
D
= 250 µA