Datasheet

Vishay Siliconix
SUB75P03-07, SUP75P03-07
Document Number: 71109
S10-2429-Rev. E, 25-Oct-10
www.vishay.com
1
P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(A)
a
- 30
0.007 at V
GS
= - 10 V ± 75
0.010 at V
GS
= - 4.5 V ± 75
SUP75P03-07
SUB75P03-07
DRAIN connected to TAB
TO-220AB
Top View
GDS
TO-263
SG
Top View
D
Ordering Information: SUB75P03-07 (TO-263)
SUB75P03-07-E3 (TO-263, Lead (Pb)-free)
SUP75P03-07 (TO-220AB)
SUP75P03-07-E3 (TO-220AB, Lead (Pb)-free)
S
G
D
P-Channel MOSFET
Notes:
a. Package limited.
b. Duty cycle  1 %.
c. When mounted on 1" square PCB (FR-4 material).
d. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Gate-Source Voltage V
GS
± 20 V
Continuous Drain Current (T
J
= 175 °C)
T
C
= 25 °C
I
D
- 75
a
A
T
C
= 125 °C - 65
Pulsed Drain Current I
DM
- 240
Avalanche Current I
AR
- 60
Repetitive Avalanche Energy
b
L = 0.1 mH
E
AR
180 mJ
Power Dissipation
T
C
= 25 °C (TO-220AB and TO-263)
P
D
187
d
W
T
A
= 25 °C (TO-263)
c
3.75
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient
PCB Mount (TO-263)
c
R
thJA
40
°C/W
Free Air (TO-220AB)
62.5
Junction-to-Case R
thJC
0.8
Available
RoHS*
COMPLIANT