Datasheet

SUP60020E
www.vishay.com
Vishay Siliconix
S19-0182-Rev. A, 25-Feb-2019
4
Document Number: 77056
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Source Drain Diode Forward Voltage
Threshold Voltage
Current De-rating
10
100
1000
10000
0.5
0.9
1.3
1.7
2.1
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 7.5 V, 20 A
V
GS
= 10 V, 30 A
10
100
1000
10000
0
0.002
0.004
0.006
0.008
0.010
246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 30 A
10
100
1000
10000
85
88
91
94
97
100
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 10 mA
10
100
1000
10000
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
1.0
1.5
2.0
2.5
3.0
3.5
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
V
GS(th)
(V)
T
J
- Junction Temperature (°C)
I
D
= 250 μA
10
100
1000
10000
0
65
130
195
260
325
0 255075100125150175
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)