Datasheet

SUP60020E
www.vishay.com
Vishay Siliconix
S19-0182-Rev. A, 25-Feb-2019
2
Document Number: 77056
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Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 80 - -
V
Gate threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2 - 4
Gate-body leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 250 nA
Zero gate voltage drain current I
DSS
V
DS
= 80 V, V
GS
= 0 V - - 1
μA
V
DS
= 80 V, V
GS
= 0 V, T
J
= 125 °C - - 150
V
DS
= 80 V, V
GS
= 0 V, T
J
= 175 °C - - 5 mA
On-state drain current
a
I
D(on)
V
DS
10 V, V
GS
= 10 V 120 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 30 A - 0.00200 0.00240
V
GS
= 7.5 V, I
D
= 20 A - 0.00215 0.00280
Forward transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A - 115 - S
Dynamic
b
Input capacitance C
iss
V
GS
= 0 V, V
DS
= 40 V, f = 1 MHz
- 10 680 -
pFOutput capacitance C
oss
- 1180 -
Reverse transfer capacitance C
rss
-50-
Total gate charge
c
Q
g
V
DS
= 40 V, V
GS
= 10 V, I
D
= 41.7 A
- 151.2 227
nC
Gate-source charge
c
Q
gs
-48.4-
Gate-drain charge
c
Q
gd
-24-
Output charge Q
oss
V
DS
= 40 V, V
GS
= 0 V - 138 207
Gate resistance R
g
f = 1 MHz 0.34 1.7 3.4
Turn-on delay time
c
t
d(on)
V
DD
= 40 V, R
L
= 1.2
I
D
33.3 A, V
GEN
= 10 V, R
g
= 1
-3060
ns
Rise time
c
t
r
-1326
Turn-off delay time
c
t
d(off)
- 50 100
Fall time
c
t
f
-1530
Drain-Source Body Diode Ratings and Characteristics
b
(T
C
= 25 °C)
Pulsed current (t = 100 μs) I
SM
- - 250 A
Forward voltage
a
V
SD
I
F
= 10 A, V
GS
= 0 V
- 0.75 1.5 V
Reverse recovery time t
rr
I
F
= 33.3 A, di/dt = 100 A/μs
- 80 160 ns
Peak reverse recovery charge I
RM(REC)
-46A
Reverse recovery charge Q
rr
- 0.182 0.275 μC
Reverse recovery fall time t
a
-44-
ns
Reverse recovery rise time t
b
-36-