Datasheet

SUP60020E
www.vishay.com
Vishay Siliconix
S19-0182-Rev. A, 25-Feb-2019
1
Document Number: 77056
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 80 V (D-S) MOSFET
FEATURES
TrenchFET
®
power MOSFET
Maximum 175 °C junction temperature
Very low Q
gd
reduces power loss from passing
through V
plateau
100 % R
g
and UIS tested
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Power supply
- Secondary synchronous rectification
•DC/DC converter
Power tools
Motor drive switch
DC/AC inverter
Battery management
OR-ing / e-fuse
Notes
a. Duty cycle 1 %
b. See SOA curve for voltage derating
c. When mounted on 1" square PCB (FR4 material)
d. Package limited
PRODUCT SUMMARY
V
DS
(V) 80
R
DS(on)
max. () at V
GS
= 10 V 0.0024
R
DS(on)
max. () at V
GS
= 7.5 V 0.0028
Q
g
typ. (nC) 151.2
I
D
(A) 150
d
Configuration Single
TO-220AB
Top View
S
S
D
G
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package TO-220
Lead (Pb)-free and halogen-free SUP60020E-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
80
V
Gate-source voltage V
GS
± 20
Continuous drain current (T
J
= 150 °C)
T
C
= 25 °C
I
D
150
d
A
T
C
= 70 °C 150
d
Pulsed drain current (t = 100 μs) I
DM
500
Avalanche current I
AS
60
Single avalanche energy
a
L = 0.1 mH E
AS
180 mJ
Maximum power dissipation
a
T
C
= 25 °C
P
D
375
b
W
T
C
= 125 °C 125
b
Operating junction and storage temperature range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient (PCB mount)
c
R
thJA
40
°C/W
Junction-to-case (drain) R
thJC
0.4

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