Datasheet

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Document Number: 72100
S-71662-Rev. B, 06-Aug-07
Vishay Siliconix
SUP57N20-33
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Junction Temperature
Avalanche Current vs. Time
0.0
0.5
1.0
1.5
2.0
2.5
3.0
- 50 - 25 0 25 50 75 100 125 150 175
T
J
- Junction Temperature (°C)
V
GS
= 10 V
I
D
= 30 A
(Normalized)
- On-Resistance r
DS(on)
t
in
(Sec)
1000
10
0.00001 0.001 0.1 1
0.1
(A)I
Dav
0.01
I
AV
(A) at T
A
= 150 °C
100
1
0.0001
I
AV
(A) at T
A
= 25 °C
Source-Drain Diode Forward Voltage
Drain Source Breakdown
vs. Junction Temperature
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
100
10
1
0.3 0.6 0.9 1.2
T
J
= 25 °C
T
J
= 150 °C
0
180
190
200
210
220
230
240
- 50 - 25 0 25 50 75 100 125 150 175
T
J
- Junction Temperature (°C)
(V)V
(BR)DSS
I
D
= 1.0 mA