Datasheet

www.vishay.com
2
Document Number: 72100
S-71662-Rev. B, 06-Aug-07
Vishay Siliconix
SUP57N20-33
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 µA
200
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
24
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160 V, V
GS
= 0 V
1
µA
V
DS
= 160 V, V
GS
= 0 V, T
J
= 125 °C
50
V
DS
= 160 V, V
GS
= 0 V, T
J
= 175 °C
250
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 10 V
120 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A
0.027 0.033
Ω
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 °C
0.069
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 °C
0.093
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
25 S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
5100
pFOutput Capacitance
C
oss
480
Reverse Transfer Capacitance
C
rss
210
Total Gate Charge
c
Q
g
V
DS
= 100 V, V
GS
= 10 V, I
D
= 85 A
90 130
nC
Gate-Source Charge
c
Q
gs
23
Gate-Drain Charge
c
Q
gd
34
Tur n - O n D e l ay Time
c
t
d(on)
V
DD
= 100 V, R
L
= 1.5 Ω
I
D
≅ 65 A, V
GEN
= 10 V, R
G
= 2.5 Ω
24 35
ns
Rise Time
c
t
r
220 330
Turn-Off Delay Time
c
t
d(off)
45 70
Fall Time
c
t
f
200 300
Source-Drain Diode Ratings and Characteristics (T
C
= 25 °C)
b
Continuous Current
I
S
65
A
Pulsed Current
I
SM
140
Forward Voltage
a
V
SD
I
F
= 65 A, V
GS
= 0 V
1.0 1.5 V
Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/µs
130 200 ns
Peak Reverse Recovery Current
I
RM(REC)
812A
Reverse Recovery Charge
Q
rr
0.52 1.2 µC