Datasheet

Vishay Siliconix
SUP57N20-33
Document Number: 72100
S-71662-Rev. B, 06-Aug-07
www.vishay.com
1
N-Channel 200-V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
Power MOSFET
• 175 °C Junction Temperature
APPLICATIONS
• Isolated DC/DC converters
- Primary-Side Switch
PRODUCT SUMMARY
V
(BR)DSS
(V) r
DS(on)
(Ω)I
D
(A)
200
0.033 at V
GS
= 10 V
57
TO-220AB
Top View
GDS
DRAIN connected to TAB
Ordering Information: SUP57N20-33
SUP57N20-33-E3 (Lead (Pb)-free)
D
G
S
N-Channel MOSFET
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS T
C
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
200
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 175 °C)
T
C
= 25 °C
I
D
57
A
T
C
= 125 °C
33
Pulsed Drain Current
I
DM
140
Avalanche Current
I
AS
35
Single Pulse Avalanche Energy
a
L = 0.1 mH
E
AS
61 mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
300
b
W
T
A
= 25 °C
c
3.75
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient (PCB Mount)
c
R
thJA
40
°C/W
Junction-to-Case (Drain)
R
thJC
0.5
Available
RoHS*
COMPLIANT