Datasheet

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Document Number: 73132
S11-2130 Rev. B, 31-Oct-11
Vishay Siliconix
SUP40N25-60
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
Avalanche Current vs. Time
0.4
0.8
1.2
1.6
2.0
2.4
2.8
- 50 - 25 0 25 50 75 100 125 150 175
T
J
- Junction Temperature (°C)
V
GS
= 10 V
I
D
= 20 A
R
DS(on)
- On-Resistance (Normalized)
t
in
(s)
100
10
0.00001 0.001 0.1 1
0.1
(A)I
Dav
0.01
I
AV
(A) at T
A
= 150 °C
1
0.0001
I
AV
(A) at T
A
= 25 °C
Source-Drain Diode Forward Voltage
Drain Source Breakdown vs. Junction Temperature
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
100
10
1
0.3 0.6 0.9 1.2
T
J
= 25 °C
T
J
= 150 °C
0
230
240
250
260
270
280
290
300
- 50 - 25 0 25 50 75 100 125 150 175
T
J
- Junction Temperature (°C)
(V)V
DS
I
D
= 1.0 mA