Datasheet

Vishay Siliconix
SUP40N25-60
Document Number: 73132
S11-2130 Rev. B, 31-Oct-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 250 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
Power MOSFETS
• 175 °C Junction Temperature
• New Low Thermal Resistance Package
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Industrial
Notes:
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(A) Q
g
(Typ)
250
0.060 at V
GS
= 10 V
40
95
0.064 at V
GS
= 6 V
38.7
TO-220AB
Top View
GD S
Ordering Information: SUP40N25-60-E3 (Lead (Pb)-free)
N-Channel MOSFE
T
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
250
V
Gate-Source Voltage
V
GS
± 30
Continuous Drain Current (T
J
= 175 °C)
T
C
= 25 °C
I
D
40
A
T
C
= 125 °C
23
Pulsed Drain Current
I
DM
70
Avalanche Current
I
AR
35
Repetitive Avalanche Energy
a
L = 0.1 mH
E
AR
61 mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
300
b
W
T
A
= 25 °C
c
3.75
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient (PCB Mount)
c
R
thJA
40
°C/W
Junction-to-Case (Drain)
R
thJC
0.5
RoHS
COMPLIANT