Datasheet

SUP40012EL
www.vishay.com
Vishay Siliconix
S18-1127-Rev. A, 12-Nov-2018
4
Document Number: 76965
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TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Source Drain Diode Forward Voltage
Threshold Voltage
Current De-rating
10
100
1000
10000
0.6
0.9
1.2
1.5
1.8
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 4.5 V, 20 A
V
GS
= 10 V, 30 A
10
100
1000
10000
0
0.001
0.002
0.003
0.004
0.005
0246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 30 A
10
100
1000
10000
42
43
44
45
46
47
48
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 10 mA
10
100
1000
10000
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
V
GS(th)
(V)
T
J
- Junction Temperature (°C)
I
D
= 250 μA
10
100
1000
10000
0
50
100
150
200
250
0 255075100125150175
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Package limited