Datasheet
SUP40012EL
www.vishay.com
Vishay Siliconix
S18-1127-Rev. A, 12-Nov-2018
2
Document Number: 76965
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 40 - -
V
Gate threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1 - 2.5
Gate-body leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 250 nA
Zero gate voltage drain current I
DSS
V
DS
= 30 V, V
GS
= 0 V - - 1
μA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125 °C - - 150
V
DS
= 30 V, V
GS
= 0 V, T
J
= 175 °C - - 5 mA
On-state drain current
a
I
D(on)
V
DS
10 V, V
GS
= 10 V 120 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 30 A - 0.00149 0.00179
V
GS
= 4.5 V, I
D
= 20 A - 0.00196 0.00236
Forward transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A - 230 - S
Dynamic
b
Input capacitance C
iss
V
GS
= 0 V, V
DS
= 20 V, f = 1 MHz
- 10 930 -
pFOutput capacitance C
oss
- 2041 -
Reverse transfer capacitance C
rss
- 101 -
Total gate charge
c
Q
g
V
DS
= 20 V, V
GS
= 10 V, I
D
= 20 A
- 130 195
nC
Gate-source charge
c
Q
gs
-33.6-
Gate-drain charge
c
Q
gd
-6.7-
Output charge Q
oss
V
DS
= 20 V, V
GS
= 0 V
-6496
Gate resistance R
g
f = 1 MHz 0.36 1.8 3.6
Turn-on delay time
c
t
d(on)
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 10 V, R
g
= 1
-2550
ns
Rise time
c
t
r
-1224
Turn-off delay time
c
t
d(off)
- 65 130
Fall time
c
t
f
-1836
Drain-Source Body Diode Ratings and Characteristics
b
(T
C
= 25 °C)
Pulsed current (t = 100 μs) I
SM
- - 300 A
Forward voltage
a
V
SD
I
F
= 10 A, V
GS
= 0 V
-0.81.5V
Reverse recovery time t
rr
I
F
= 10 A, di/dt = 100 A/μs
- 58 116 ns
Peak reverse recovery charge I
RM(REC)
-2.14.2A
Reverse recovery charge Q
rr
- 72 144 nC
Reverse recovery fall time t
a
-32-
ns
Reverse recovery rise time t
b
-26-