Datasheet

SUP40012EL
www.vishay.com
Vishay Siliconix
S18-1127-Rev. A, 12-Nov-2018
1
Document Number: 76965
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 40 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• Maximum 175 °C junction temperature
• Excellent R
DS
-Q
g
and R
DS
-Q
oss
FOM reduce
power loss from conduction and switching to
enable high efficiency
• 100 % R
g
and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Power supply
- Secondary synchronous rectification
•DC/DC converter
• Power tools
• Motor drive switch
• Battery management
Notes
a. Duty cycle  1 %
b. See SOA curve for voltage derating
c. When mounted on 1" square PCB (FR4 material)
d. Package limited
PRODUCT SUMMARY
V
DS
(V) 40
R
DS(on)
max. () at V
GS
= 10 V 0.00179
R
DS(on)
max. () at V
GS
= 4.5 V 0.00236
Q
g
typ. (nC) 130
I
D
(A) 150
d
Configuration Single
TO-220AB
Top View
S
S
D
G
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package TO-220
Lead (Pb)-free and halogen-free SUP40012EL-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
40
V
Gate-source voltage V
GS
± 20
Continuous drain current (T
J
= 150 °C)
T
C
= 25 °C
I
D
150
d
A
T
C
= 70 °C 150
d
Pulsed drain current (t = 100 μs) I
DM
300
Avalanche current I
AS
50
Single avalanche energy
a
L = 0.1 mH E
AS
125 mJ
Maximum power dissipation
a
T
C
= 25 °C
P
D
150
b
W
T
C
= 125 °C 50
b
Operating junction and storage temperature range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient (PCB mount)
c
R
thJA
40
°C/W
Junction-to-case (drain) R
thJC
1