Datasheet

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Document Number: 74342
S12-0680-Rev. C, 26-Mar-12
Vishay Siliconix
SUM90N03-2m2P
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
R
DS(on)
vs. V
GS
vs. Temperature
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150 175
V
GS
= 10 V, I
D
= 32 A
T
J
- Junction Temperature (°C)
R
DS(on)
-
e
c
na
t
si
seR-nO
)
dez
i
lam
ro
N
(
V
GS
= 4.5 V, I
D
= 29.8 A
0.000
0.001
0.002
0.003
0.004
02468 10
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- e (Ω)cnatsiseR-nO
I
D
= 32 A
T
A
= 125 °C
T
A
= 25 °C
Forward Diode Voltage vs. Temperature
Threshold Voltage
)A( tnerruC ecruoS -I
S
V
SD
- Source-to-Drain Voltage (V)
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
T
J
= 25 °C
T
J
= 150 °C
0.8
1.2
1.6
2.0
2.4
2.8
- 50 - 25 0 25 50 75 100 125 150 175
I
D
= 250 µA
)V(V
)ht(SG
T
J
- Temperature (°C)
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
*V
GS
minimum V
GS
at which r
DS(on)
is specified
1000
10
0.1 1 10 100
0.1
100
1
10 ms
T
A
= 25 °C
Single Pulse
100 ms
1 s
100 µs
1 ms
DC
Limited by r
DS(on)
*
0.01
0.001
10 s
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