Datasheet
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Document Number: 74342
S12-0680-Rev. C, 26-Mar-12
Vishay Siliconix
SUM90N03-2m2P
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For more information please contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min . Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
30 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 µA
35
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
- 7.5
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1.5 2.5 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
µA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
10
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
90 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 32 A
0.0018 0.0022
V
GS
= 4.5 V, I
D
= 29 A
0.0022 0.0027
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 32 A
160 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
12065
pFOutput Capacitance
C
oss
1725
Reverse Transfer Capacitance
C
rss
970
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 32 A
171 257
nC
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 29 A
81.5 123
Gate-Source Charge
Q
gs
34
Gate-Drain Charge
Q
gd
29
Gate Resistance
R
g
f = 1 MHz 1.4 2.1
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 15 V, R
L
= 0.555
I
D
27 A, V
GEN
= 10 V, R
g
= 1
18 27
ns
Rise Time
t
r
11 17
Turn-Off Delay Time
t
d(off)
70 105
Fall Time
t
f
10 15
Tur n - O n D e l ay T im e
t
d(on)
V
DD
= 15 V, R
L
= 0.625
I
D
24 A, V
GEN
= 4.5 V, R
g
= 1
55 83
Rise Time
t
r
180 270
Turn-Off Delay Time
t
d(off)
55 83
Fall Time
t
f
12 18
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
90
A
Pulse Diode Forward Current
a
I
SM
200
Body Diode Voltage
V
SD
I
S
= 22 A
0.8 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 20 A, di/dt = 100 A/µs, T
J
= 25 °C
52 78 ns
Body Diode Reverse Recovery Charge
Q
rr
70.2 105 nC
Reverse Recovery Fall Time
t
a
27
ns
Reverse Recovery Rise Time
t
b
25