Datasheet

Vishay Siliconix
SUM90N03-2m2P
Document Number: 74342
S12-0680-Rev. C, 26-Mar-12
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For more information please contact: [e-mail]
N-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Power MOSFET
•100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• OR-ing
• Server
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()
I
D
(A)
a, e
Q
g
(Typ.)
30
0.0022 at V
GS
= 10 V
90
82 nC
0.0027 at V
GS
= 4.5 V
90
Ordering Information: SUM90N03-2m2P-E3 (Lead (Pb)-free)
TO-263
S
D
G
T op V i e w
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 175 °C)
T
C
= 25 °C
I
D
90
a, e
A
T
C
= 70 °C
90
e
T
A
= 25 °C
33
b, c
T
A
= 70 °C
29.8
b, c
Pulsed Drain Current
I
DM
200
Avalanche Current Pulse
L = 0.1 mH
I
AS
36
Single Pulse Avalanche Energy
E
AS
64.8 mJ
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
90
a, e
A
T
A
= 25 °C
3.13
b, c
Maximum Power Dissipation
T
C
= 25 °C
P
D
250
a
W
T
C
= 70 °C
175
T
A
= 25 °C
3.75
b, c
T
A
= 70 °C
2.63
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, d
t  10 s
R
thJA
32 40
°C/W
Maximum Junction-to-Case Steady State
R
thJC
0.5 0.6