Datasheet

Vishay Siliconix
SUM55P06-19L
www.vishay.com
4
Document Number: 73059
S12-3070-Rev. D, 24-Dec-12
This document is subject to change without notice.
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
Avalanche Current vs. Time
0.4
0.7
1.0
1.3
1.6
1.9
2.2
- 50 - 25 0 2 5 5 0 7 5 100 125 150 175
T
J
- Junction T emperature (°C)
V
GS
= 10 V
I
D
= 30 A
R
DS(on)
- On-Resistance (Normalized)
t
in
(s)
1000
10
0.0001 0.001 0.1 1
100
(A)I
Dav
0.01
I
AV
(A) at T
A
= 25 °C
I
AV
(A) at T
A
= 150 °C
1
0.1
Source-Drain Diode Forward Voltage
Drain Source Breakdown vs.Junction Temperature
0.0 0.3 0.6 0.9 1.2
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
100
10
1
T
J
= 25 °C
T
J
= 150 °C
60
63
66
69
72
75
- 50 - 25 0 2 5 5 0 7 5 100 125 150 175
T
J
- Junction Temperature (°C)
(V)V
(BR)DSS
I
D
= 10 mA