Datasheet

Vishay Siliconix
SUM55P06-19L
Document Number: 73059
S12-3070-Rev. D, 24-Dec-12
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: [e-mail]
P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
Power MOSFET
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes:
a. Duty cycle  1%.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()
I
D
(A)
d
Q
g
(Typ.)
- 60
0.019 at V
GS
= - 10 V
- 55
76
0.025 at V
GS
= - 4.5 V
- 48
TO-263
S
D
G
T op V i e w
Ordering Information:
SUM55P06-19L-E3 (Lead (Pb)-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
- 60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current
d
(T
J
= 175 °C)
T
C
= 25 °C
I
D
- 55
A
T
C
= 125 °C
- 31
Pulsed Drain Current
I
DM
- 150
Avalanche Current
L = 0.1 mH
I
AS
- 45
Single Pulse Avalanche Energy
a
E
AS
101 mJ
Power Dissipation
T
C
= 25 °C
P
D
125
c
W
T
A
= 25 °C
b
3.75
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient
PCB Mount
b
R
thJA
40
°C/W
Junction-to-Case
R
thJC
1.2