Datasheet

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Document Number: 72314
S-70311-Rev. C, 12-Feb-07
Vishay Siliconix
SUM45N25-58
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Junction Temperature
Avalanche Current vs. Time
0.4
0.8
1.2
1.6
2.0
2.4
2.8
- 50 - 25 0 25 50 75 100 125 150 175
T
J
- Junction Temperature (°C)
(Normalized)
r
DS(on)
- On-Resistance
V
GS
= 10 V
I
D
= 20 A
t
in
(Sec)
100
10
0.00001 0.001 0.1 1
0.1
(a)I
Dav
0.01
1
0.0001
I
AV
(A) at T
A
= 25 °C
I
AV
(A) at T
A
= 150 °C
Source-Drain Diode Forward Voltage
Drain Source Breakdown
vs. Junction Temperature
T
J
= 150 °C
V
SD
- Source-to-Drain V oltage (V)
- Source Current (A)I
S
100
10
1
0.3 0.6 0.9 1.20
T
J
= 25 °C
230
240
250
260
270
280
290
300
- 50 - 25 0 25 50 75 100 125 150 175
T
J
- Junction Temperature (°C)
(V)V
(BR)DSS
I
D
= 1.0 mA