Datasheet

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Document Number: 73045
S-80273-Rev. B, 11-Feb-08
Vishay Siliconix
SUM110P06-08L
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Junction Temperature
Avalanche Current vs. Time
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150 175
T
J
− Junction Temperature (°C)
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
− On-Resistance
(Normalized)
t
in
(s)
1000
10
0.00001 0.001 0.1 1
100
(A)I
Dav
0.010.0001
I
AV
(A) at T
A
= 25 °C
I
AV
(A) at T
A
= 150 °C
1
0.1
Source-Drain Diode Forward Voltage
Drain Source Breakdown vs.
Junction Temperature
0.0 0.3 0.6 0.9 1.2
V
SD
− Source-to-Drain Voltage (V)
− Source Current (A)I
S
100
10
1
T
J
= 25 °C
T
J
= 150 °C
56
60
64
6
8
72
76
- 50 - 25 0 25 50 75 100 125 150 175
T
J
− Junction Temperature (°C)
(V)
V
(BR)DSS
I
D
= 250 µA