Datasheet

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Document Number: 73045
S-80273-Rev. B, 11-Feb-08
Vishay Siliconix
SUM110P06-08L
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= - 250 µA
- 60
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 1 - 3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 60 V, V
GS
= 0 V
- 1
µA
V
DS
= - 60 V, V
GS
= 0 V, T
J
= 125 °C
- 50
V
DS
= - 60 V, V
GS
= 0 V, T
J
= 175 °C
- 250
On-State Drain Current
a
I
D(on)
V
DS
= - 5 V, V
GS
= - 10 V
- 120 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= - 10 V, I
D
= - 30 A
0.0065 0.008
Ω
V
GS
= - 10 V, I
D
= - 30 A, T
J
= 125 °C
0.0129
V
GS
= - 10 V, I
D
= - 30 A, T
J
= 175 °C
0.016
V
GS
= - 4.5 V, I
D
= - 20 A
0.0085 0.0105
Forward Transconductance
a
g
fs
V
DS
= - 15 V, I
D
= - 50 A
20 S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= - 25 V, f = 1 MHz
9200
pFOutput Capacitance
C
oss
975
Reverse Transfer Capacitance
C
rss
760
Total Gate Charge
c
Q
g
V
DS
= - 30 V, V
GS
= - 10 V, I
D
= - 110 A
160 240
nC
Gate-Source Charge
c
Q
gs
40
Gate-Drain Charge
c
Q
gd
36
Gate Resistance
R
g
f = 1 MHz 1.5 3 4.5 Ω
Tur n - O n D e l ay Time
c
t
d(on)
V
DD
= - 30 V, R
L
= 0.27 Ω
I
D
≅ - 110 A, V
GEN
= - 10 V, R
G
= 2.5 Ω
20 30
ns
Rise Time
c
t
r
190 285
Turn-Off Delay Time
c
t
d(off)
140 210
Fall Time
c
t
f
300 450
Source-Drain Diode Ratings and Characteristics T
C
= 25 °C
b
Continuous Current
I
S
- 110
A
Pulsed Current
I
SM
- 200
Forward Voltage
a
V
SD
I
F
= - 50 A, V
GS
= 0 V
- 1.0 - 1.5 V
Reverse Recovery Time
t
rr
I
F
= - 50 A, di/dt = 100 A/µs
60 90 ns
Peak Reverse Recovery Charge
I
RM(REC)
- 3 - 4.5 A
Reverse Recovery Charge
Q
rr
0.09 0.2 µC