Datasheet

Vishay Siliconix
SUM110P06-08L
Document Number: 73045
S-80273-Rev. B, 11-Feb-08
www.vishay.com
1
P-Channel 60-V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
• 100 % R
g
Tested
PRODUCT SUMMARY
V
DS
(V) r
DS(on)
(Ω)
I
D
(A)
d
- 60
0.008 at V
GS
= - 10 V
- 110
0.0105 at V
GS
= - 4.5 V
TO-263
SDG
Top View
Ordering Information: SUM110P06-08L
SUM110P06-08L-E3 (Lead (Pb)-free)
S
G
D
P-Channel MOSFET
Notes:
a. Duty cycle ≤ 1 %.
b. When Mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by Package.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS T
C
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
- 60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current
d
(T
J
= 175 °C)
T
C
= 25 °C
I
D
- 110
A
T
C
= 125 °C
- 75
Pulsed Drain Current
I
DM
- 200
Avalanche Current
L = 0.1 mH
I
AS
- 85
Single Pulse Avalanche Energy
d
E
AS
211 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
272
c
W
T
A
= 25 °C
b
3.75
b
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient PCB Mount
d
R
thJA
40
°C/W
Junction-to-Case
R
thJC
0.55
Available
RoHS*
COMPLIANT