Datasheet

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Document Number: 73236
S-70534-Rev. C, 26-Mar-07
Vishay Siliconix
SUM110N06-3m9H
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Junction Temperature
Avalanche Current vs. Time
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150 175
T
J
- J unction Temperature (°C)
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
- On-Resistance
(Normalized)
t
in
(Sec)
1000
10
0.00001 0.001 0.1 1
0.1
(a)
I
Dav
0.01
I
AV
(A) at T
A
= 150 °C
100
1
0.0001
I
AV
(A) at T
A
= 25 °C
Source-Drain Diode Forward Voltage
Drain Source Breakdown
vs. Junction Temperature
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
100
10
1
0.3 0.6 0.9 1.2
T
J
= 25 °C
T
J
= 150 °C
0
60
62
64
66
6
8
70
72
74
- 50 - 25 0 25 50 75 100 125 150 175
T
J
- Junction Temperature (°C)
(V)V
(BR)DSS
I
D
= 10 mA