Datasheet

Document Number: 73236
S-70534-Rev. C, 26-Mar-07
www.vishay.com
3
Vishay Siliconix
SUM110N06-3m9H
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
Transconductance
Capacitance
0
50
100
150
200
250
02468 10
V
DS
-)V( egatloV ecruoS-ot-niarD
V
GS
= 10 thru 7 V
6 V
- D r ain Current (A)I
D
5 V
0
50
100
150
200
250
300
0153045607590
-
Transconductance (S)
g
fs
T
C
= - 55 °C
25 °C
125 °C
I
D
- D r ain Current (A)
0
3000
6000
9000
12000
15000
18000
21000
0102030405060
V
DS
- Drain-to-Source Voltage (V)
C- Capacitance (pF)
C
iss
C
oss
C
rss
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
50
100
150
200
250
0123 4567
V
GS
- Gate-to-Source Voltage (V)
- D r ain Current (A)I
D
25 °C
- 55 °C
T
C
= 125 °C
0.000
0.001
0.002
0.003
0.004
0.005
0.006
020406080 100 120
I
D
- Drain Current (A)
V
GS
= 10 V
- On-Resistance (Ω)
r
DS(on)
0
4
8
12
16
20
0 50 100 150 200 250 300 350 400
- G ate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 30 V
I
D
= 110 A