Datasheet

www.vishay.com
2
Document Number: 73236
S-70534-Rev. C, 26-Mar-07
Vishay Siliconix
SUM110N06-3m9H
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 µA
60
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
3.4 4.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
µA
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
50
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 °C
250
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 10 V
120 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A
0.00325 0.0039
Ω
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 °C
0.0063
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 °C
0.0082
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30 S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
15 800
pFOutput Capacitance
C
oss
1050
Reverse Transfer Capacitance
C
rss
600
Gate Resistance
R
g
f = 1 MHz 0.6 1.2 1.8 Ω
Total Gate Charge
c
Q
g
V
DS
= 30 V, V
GS
= 10 V, I
D
= 110 A
200 300
nC
Gate-Source Charge
c
Q
gs
80
Gate-Drain Charge
c
Q
gd
45
Tur n - O n D e l ay Time
c
t
d(on)
V
DD
= 30 V, R
L
= 0.27 Ω
I
D
≅ 110 A, V
GEN
= 10 V, R
g
= 2.5 Ω
45 70
ns
Rise Time
c
t
r
160 240
Turn-Off Delay Time
c
t
d(off)
75 115
Fall Time
c
t
f
14 25
Source-Drain Diode Ratings and Characteristics (T
C
= 25 °C)
b
Continuous Current
I
S
110
A
Pulsed Current
I
SM
240
Forward Voltage
a
V
SD
I
F
= 85 A, V
GS
= 0 V
1.1 1.5 V
Reverse Recovery Time
t
rr
I
F
= 85 A, di/dt = 100 A/µs
65 100 ns
Peak Reverse Recovery Current
I
RM(REC)
4.4 6.6 A
Reverse Recovery Charge
Q
rr
143 330 nC