Datasheet

Vishay Siliconix
SUM110N06-3m9H
Document Number: 73236
S-70534-Rev. C, 26-Mar-07
www.vishay.com
1
N-Channel 60-V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
Power MOSFET
• 175 °C Junction Temperature
• Low Thermal Resistance Package
• High Threshold Voltage At High Temperature
• 100 % R
g
Tested
PRODUCT SUMMARY
V
(BR)DSS
(V) r
DS(on)
(Ω)I
D
(A) Q
g
(Typ)
60
0.0039 at V
GS
= 10 V
110
a
200
Ordering Information: SUM110N06-3m9H-E3 (Lead (Pb)-free)
TO-263
SDG
Top View
N-Ch
annel MOSFET
G
D
S
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
ABSOLUTE MAXIMUM RATINGS T
C
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 175 °C)
T
C
= 25 °C
I
D
110
a
A
T
C
= 125 °C
110
a
Pulsed Drain Current
I
DM
440
Single Pulse Avalanche Current
I
AS
70
Single Pulse Avalanche Energy
L = 0.1 mH
E
AS
245 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
375
c
W
T
A
= 25 °C
d
3.75
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient
PCB Mount
d
R
thJA
40
°C/W
Junction-to-Case (Drain)
R
thJC
0.4
RoHS
COMPLIANT