Datasheet
www.vishay.com
2
Document Number: 72145
S-71660-Rev. C, 06-Aug-07
Vishay Siliconix
SUD23N06-31L
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min
Typ
a
Max Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 µA
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1.0 2.0 3.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
µA
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
50
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 °C
250
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
50 A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 15 A
0.025 0.031
Ω
V
GS
= 10 V, I
D
= 15 A, T
J
= 125 °C
0.055
V
GS
= 10 V, I
D
= 15 A, T
J
= 175 °C
0.069
V
GS
= 4.5 V, I
D
= 10 A
0.037 0.045
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 15 A
20 S
Dynamic
a
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
670
pFOutput Capacitance
C
oss
140
Reverse Transfer Capacitance
C
rss
60
Total Gate Charge
c
Q
g
V
DS
= 30 V, V
GS
= 10 V, I
D
= 23 A
11 17
nC
Gate-Source Charge
c
Q
gs
3
Gate-Drain Charge
c
Q
gd
3
Tur n - O n D e l ay Time
c
t
d(on)
V
DD
= 30 V, R
L
= 1.3 Ω
I
D
≅ 23 A, V
GEN
= 10 V, R
g
= 2.5 Ω
815
ns
Rise Time
c
t
r
15 25
Turn-Off Delay Time
c
t
d(off)
30 45
Fall Time
c
t
f
25 40
Source-Drain Diode Ratings and Characteristics (T
C
= 25 °C)
Pulsed Current
I
SM
50
A
Diode Forward Voltage
V
SD
I
F
= 15 A, V
GS
= 0 V
1.0 1.5 V
Reverse Recovery Time
t
rr
I
F
= 15 A, di/dt = 100 A/µs
30 60 ns