Datasheet

Vishay Siliconix
SUD23N06-31L
Document Number: 72145
S-71660-Rev. C, 06-Aug-07
www.vishay.com
1
N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level
FEATURES
• TrenchFET
®
Power MOSFET
• 175 °C Junction Temperature
PRODUCT SUMMARY
V
DS
(V) r
DS(on)
(Ω)
I
D
(A)
a
60
0.031 at V
GS
= 10 V
23
0.045 at V
GS
= 4.5 V
19.5
TO-252
SGD
Top View
Drain Connected to Tab
Ordering Information: SUD23N06-31L
SUD23N06-31L-E3 (Lead (Pb)-free)
N-Channel MOSFET
G
D
S
Notes:
a. Surface Mounted on 1" x 1" FR4 board, t ≤ 10 sec.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS T
C
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Gate-Source Voltage
V
GS
± 20 V
Continuous Drain Current (T
J
= 175 °C)
b
T
C
= 25 °C
I
D
23
A
T
C
= 100 °C
16.5
Pulsed Drain Current
I
DM
50
Continuous Source Current (Diode Conduction)
I
S
23
Avalanche Current
I
AS
20
Single Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH
E
AS
20 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
100
W
T
A
= 25 °C
3
a
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 sec
R
thJA
18 22
°C/W
Steady State
40 50
Maximum Junction-to-Case
R
thJC
3.2 4
Available
RoHS*
COMPLIANT